silicon germanium comprises

silicon germanium comprises

Silicon germanium heterojunction bipolar transistor with

A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a combination of an amount of the dopant, an amount of the boron, and a size of the

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Rapid Solid-State Metathesis Routes to Nanostructured

2014-8-19  Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal

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Compositions for polishing silicon and germanium W. R

A composition for polishing silicon and germanium comprises a synthetic amorphous silica polishing agent and a suspending agent selected from the group consisting of water-soluble carboxypolymethylene gums and xanthum gums. The composition may be used for polishing in

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Method of doped germanium formation Applied Materials,

The selectively depositing the boron-doped layer on the exposed silicon-germanium surface comprises co-flowing a germanium source gas and a boron source gas and stopping the flow of the germanium source gas while continuing to flow the boron source gas. The method further comprises exposing the substrate to a post-treatment process.

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SILICON GERMANIUM THICKNESS AND COMPOSITION

The method of claim 2, wherein determining the composition of the silicon germanium film comprises comparing the XRF signal and the XPS signal to a realistic material layer mixing model that scales the predicted intensity of an XPS Ge signal and an XRF Ge signal relative to a pure germanium film, constraining the remaining fraction of the

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Silicon germanium fin immune to epitaxy defect

For example, if the material of the dummy gates 202, 204, 206 comprises amorphous silicon, sidewall spacers are required if the layer 302 is formed by epitaxial growth of high concentration of germanium containing material. The spacers can be formed by, for example, isotropically depositing a conformal layer of insulating material (e.g

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A Investigation of the Gettering Properties of Silicon

Work concerning silicon-germanium (SiGe) and silicon -carbon (SiC) compounds is presented in this dissertation. This paper comprises both experimental and theoretical work. Extended Huckel (EHT) parameters for the band structure of group IV semiconductors and semiconductor compounds are put forth using established parameters. It will be demonstrated that EHT theory can accurately predict the

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(PDF) SILICON GERMANIUM MASK FOR DEEP SILICON ETCHING

With silicon oxide as a SUMMARY mask material selectivity may reach 100:1 When etching sili con in an SF6/O2 plasma. That is, for every 1 um of silicon [0009] According to one embodiment, a method includes oxide etched in the SF6/O2 plasma, 100 um of silicon is depositing a silicon germanium etch mask on a semiconduc etched. tor material

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(PDF) Comparison of Silicon, Germanium, Gallium Nitride

Comparison of Silicon, Germanium, Gallium Nitride, and Diamond for using as a Detector Material in Experimental High Energy Physics September 2018 Results in Physics 11

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Towards a fully functional integrated photonic-electronic

2016-1-19  Silicon-germanium (Si1-xGex) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than

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US4260396A Compositions for polishing silicon and

A composition for polishing silicon and germanium comprises a synthetic amorphous silica polishing agent and a suspending agent selected from the group consisting of water-soluble carboxypolymethylene gums and xanthum gums. The composition may be used for polishing in

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Production method for silicon based silicon/germanium

The invention discloses a preparing method for silicon-based silicon/germanium nanometer crystal grain, which comprises the following steps of: preparing silicon dioxide over-saturated phosphoric acid solution; soaking the silicon substrate into the silicon dioxide over-saturated phosphoric acid solution, wherein, the silicon dioxide which is separated from the surface of the silicon substrate

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US Patent Application for SILICON GERMANIUM FIN IMMUNE TO

2016-12-14  For example, if the material of the dummy gates 202, 204, 206 comprises amorphous silicon, sidewall spacers are required if the layer 302 is formed by epitaxial growth of high concentration of germanium containing material. The spacers can be formed by, for example, isotropically depositing a conformal layer of insulating material (e.g

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HIGH TRANSMISSION SILICON Spardjurs

2013-11-5  Germanium is an alternative to ZnS and ZnSe in the LWIR window offering very high thus more dominant in germanium than in silicon and onset is at a much lower wavelength for germanium (~5-10 μm). Manufacturingwise this puts comprises the

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A Investigation of the Gettering Properties of Silicon

Work concerning silicon-germanium (SiGe) and silicon -carbon (SiC) compounds is presented in this dissertation. This paper comprises both experimental and theoretical work. Extended Huckel (EHT) parameters for the band structure of group IV semiconductors and semiconductor compounds are put forth using established parameters. It will be demonstrated that EHT theory can accurately predict the

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The GREAT spectrometer Publons

GREAT comprises a system of silicon, germanium and gas detectors optimised for detecting the arrival of the. reaction products and correlating with any subsequent radioactive decay involving the emission of protons, a particles, beta particles, gamma-rays, X-rays or conversion electrons.

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Dual doped polysilicon and silicon germanium etch

A silicon germanium etch is provided. An etchant gas is provided into the processing chamber, wherein the etchant gas comprises HBr, an inert diluent, and at least one of O 2 and N 2. The substrate is cooled to a temperature below 40° C. The etching gas is transformed to a plasma to etch the silicon germanium

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(PDF) SILICON GERMANIUM MASK FOR DEEP SILICON ETCHING

With silicon oxide as a SUMMARY mask material selectivity may reach 100:1 When etching sili con in an SF6/O2 plasma. That is, for every 1 um of silicon [0009] According to one embodiment, a method includes oxide etched in the SF6/O2 plasma, 100 um of silicon is depositing a silicon germanium etch mask on a semiconduc etched. tor material

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Towards a fully functional integrated photonic-electronic

2016-1-19  Silicon-germanium (Si1-xGex) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than

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(PDF) Strained silicon layer in CMOS technology

When considering a silicon–germanium channel, the maximum TCAD-simulated current drive is 880.20 and $806.58~\mu \text{A}/\mu \text{m}$ for n- and p-type operation, respectively, thus making

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Production method for silicon based silicon/germanium

The invention discloses a preparing method for silicon-based silicon/germanium nanometer crystal grain, which comprises the following steps of: preparing silicon dioxide over-saturated phosphoric acid solution; soaking the silicon substrate into the silicon dioxide over-saturated phosphoric acid solution, wherein, the silicon dioxide which is separated from the surface of the silicon substrate

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Cobalt silicidation process for substrates with a silicon

Cobalt silicidation process for substrates with a silicon--germanium layer Abstract. A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer

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Phoenix Silicon International Corporation

Substrate comprises. Silicon carbide (SiC) substrate Lithium tantalate (LT, LiTaO3) substrate Lithium niobate (LN, LiNbO3) substrate Quartz (Quartz) substrate Glass (Glass) substrate Germanium (Ge) substrate And other special material substrate

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BJNANO Silicon and germanium nanocrystals: properties

Silicon and germanium nanocrystals: properties and characterization. Group-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries.

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Adamantane Structures in the Chemistry of Silicon

The methods of synthesis and properties of compounds with the adamantane structure containing silicon, germanium, or tin atoms in the side chain or substituting carbon atoms in the adamantane lattice are examined. The review includes studies published towards the beginning of 1979. The bibliography comprises 177 references. CONTENTS I

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HMOS SILICON-GERMANIUM John Barker 1 updates

Start date: Oct 1, 1997 HMOS SILICON-GERMANIUM Part of the £ 7 million UK HMOS Consortium* 1996-2004. Glasgow contribution: Investigate the physics, theory, modelling, design of SiGe

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US Patent for Process for forming a silicon-germanium base

A process for forming a silicon-germanium base of a heterojunction bipolar transistor. First, a silicon substrate having a mesa surrounded by a trench is formed. Next, a silicon-germanium layer is deposited on the substrate and the portion of the silicon-germanium layer adjacent the mesa is removed to form the silicon-germanium base. In a second embodiment, the process comprises the steps of

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Silicon-Germanium for Phased Array Radars

Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong

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P-FET with strained silicon-germanium channel

2019-6-13  A silicon-germanium layer is epitaxially grown above the source-drain region with a target concentration of germanium atoms. The semiconductor structure is annealed to diffuse the germanium atoms from the silicon-germanium layer into the channel region to form a silicon-germanium

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Patent Report: US10115800 Vertical fin bipolar

2019-6-13  A method of manufacturing a bipolar junction transistor (BJT) structure is provided. Pattern etching through a second semiconductor layer and recessing a silicon germanium layer are performed to form a plurality of vertical fins each including a silicon germanium pattern, a second semiconductor patt

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